UPD70F3737GF-GAS-AX Renesas Electronics America, UPD70F3737GF-GAS-AX Datasheet - Page 923
UPD70F3737GF-GAS-AX
Manufacturer Part Number
UPD70F3737GF-GAS-AX
Description
MCU 32BIT V850ES/JX3-L 100-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Jx3-Lr
Datasheet
1.UPD70F3737GF-GAS-AX.pdf
(1071 pages)
Specifications of UPD70F3737GF-GAS-AX
Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, EBI/EMI, I²C, UART/USART
Peripherals
DMA, LVD, PWM, WDT
Number Of I /o
84
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.2 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Manufacturer
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Company:
Part Number:
UPD70F3737GF-GAS-AX
Manufacturer:
Renesas Electronics America
Quantity:
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30.5 Rewriting by Self Programming
30.5.1 Overview
memory by itself. By using this interface and a self programming library that is used to rewrite the flash memory with a
user application program, the flash memory can be rewritten by a user application transferred in advance to the
internal RAM or external memory. Consequently, the user program can be upgraded and constant data
rewritten in the field.
The V850ES/JG3-L supports a flash macro service that allows the user program to rewrite the internal flash
Note Be sure not to allocate the program code to the block where the constant data of the rewriting target is
allocated. See 30.2 Memory Configuration for the block configuration.
Figure 30-16. Concept of Self Programming
Flash function execution Flash information
Self programming library
CHAPTER 30 FLASH MEMORY
User’s Manual U18953EJ5V0UD
Flash macro service
Flash memory
Application program
Erase, write
Note
can be
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