DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 797
DF2398TE20
Manufacturer Part Number
DF2398TE20
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2398TE20
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2398TE20
HD64F2398TE20
HD64F2398TE20
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 797 of 1049
- Download datasheet (5Mb)
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 32 bytes (Shows the total time the flash memory control register (FLMCR) is set. It does
3. Block erase time (Shows the period the E bit in FLMCR is set. It does not include the erase verification time.)
4. Maximum programming time
5. Number of times when the wait time after P bit setting (z) = 200 s.
6. For the maximum erase time (t
not include the programming verification time.)
(t
The maximum number of writes (N) should be set according to the actual set value of z so as not to exceed the
maximum programming time (t
(z) and the maximum number of erases (N):
t
The values of z and N should be set so as to satisfy the above formula.
Examples: When z = 5 [ms], N = 240 times
Item
Programming Wait time after SWE bit
Erase
E
p
(max) = Wait time after E bit setting (z) maximum number of erases (N)
(max)=wait time after P-bit setting (Z)
When z = 10 [ms], N = 120 times
setting*
Wait time after PSU bit
setting*
Wait time after P bit
setting*
Wait time after P bit clear*
Wait time after PSU bit
clear*
Wait time after PV bit
setting*
Wait time after H'FF dummy
write*
Wait time after PV bit clear*
Maximum programming
count*
Wait time after SWE bit
setting*
Wait time after ESU bit
setting*
Wait time after E bit
setting*
Wait time after E bit clear*
Wait time after ESU bit
clear*
Wait time after EV bit
setting*
Wait time after H'FF dummy
write*
Wait time after EV bit clear*
Maximum erase count*
1
1
1
1
1
*
1
1
1
1
1
1
1
1
*
4
*
4
6
P
E
(max)).
(max)), the following relationship applies between the wait time after E bit setting
1
*
6
1
1
maximum programming count (N))
1
1
x
y
z
N
Symbol Min
x
y
z
N
10
50
150
10
10
4
2
4
—
10
200
5
10
10
20
2
5
120
Typ
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
—
200
—
—
—
—
—
1000
*
—
—
10
—
—
—
—
—
240
5
Rev.6.00 Oct.28.2004 page 767 of 1016
Unit
Times
ms
Times
s
s
s
s
s
s
s
s
s
s
s
s
s
s
s
Test
Condition
Z = 200 s
REJ09B0138-0600H
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