DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 681
DF2398TE20
Manufacturer Part Number
DF2398TE20
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2398TE20
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2398TE20
HD64F2398TE20
HD64F2398TE20
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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19.22.4 Memory Read Mode
Table 19-42 AC Characteristics in Memory Read Mode
Conditions: V
After the end of an auto-program, auto-erase, or status read operation, the command wait state is entered. To read
memory contents, a transition must be made to memory read mode by means of a command write before the read is
executed.
Command writes can be performed in memory read mode, just as in the command wait state.
Once memory read mode has been entered, consecutive reads can be performed.
After power-on, memory read mode is entered.
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Item
A
Note: Data is latched at the rising edge of WE.
CC
18
to A
Data
= 5.0 V 10%, V
WE
OE
CE
Figure 19-55 Memory Read Mode Timing Waveforms after Command Write
0
SS
= 0 V, T
t
ces
Command write
t
f
t
t
t
t
t
t
t
t
Symbol
nxtc
ceh
ces
dh
ds
wep
r
f
a
t
wep
= 25 C 5 C
t
ds
H'00
t
dh
t
t
ceh
r
Min
20
0
0
50
50
70
—
—
t
nxtc
—
—
—
—
—
—
30
30
Max
Memory read mode
Address stable
Rev.6.00 Oct.28.2004 page 651 of 1016
Data
ns
ns
ns
ns
ns
ns
ns
Unit
s
REJ09B0138-0600H
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