DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 657
DF2398TE20
Manufacturer Part Number
DF2398TE20
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of DF2398TE20
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2398TE20
HD64F2398TE20
HD64F2398TE20
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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19.16
19.16.1 Flash Memory Control Register 1 (FLMCR1)
FLMCR1 is an 8-bit register used for flash memory operating mode control. Program-verify mode or erase-verify mode is
entered by setting SWE to 1, then setting the EV or PV bit. Program mode is entered by setting SWE to 1, then setting the
PSU bit, and finally setting the P bit. Erase mode is entered by setting SWE to 1, then setting the ESU bit, and finally
setting the E bit. FLMCR1 is initialized to H'80 by a reset, and in hardware standby mode and software standby mode.
When on-chip flash memory is disabled, a read will return H'00, and writes are invalid.
Writing to bits ESU, PSU, EV, and PV in FLMCR1 is enabled only when SWE = 1; writing to the E bit is enabled only
when SWE = 1, and ESU = 1; and writing to the P bit is enabled only when SWE = 1, and PSU = 1.
Bit 7—Flash Write Enable Bit (FWE): Sets hardware protection against flash memory programming/erasing. These bits
cannot be modified and are always read as 1 in this model.
Bit 6—Software Write Enable Bit (SWE): Enables or disables flash memory programming and erasing. This bit should
be set when setting bits 5 to 0, EBR1 bits 7 to 0, and EBR2 bits 3 to 0.
When SWE = 1, the flash memory can only be read in program-verify or erase-verify mode.
Bit 5—Erase Setup Bit (ESU): Prepares for a transition to erase mode. Do not set the SWE, PSU, EV, PV, E, or P bit at
the same time.
Bit 4—Program Setup Bit (PSU): Prepares for a transition to program mode. Do not set the SWE, ESU, EV, PV, E, or P
bit at the same time.
Bit
Initial value :
R/W
Register Descriptions
Bit 6
SWE
0
1
Bit 5
ESU
0
1
Bit 4
PSU
0
1
:
:
FWE
7
1
R
Description
Writes disabled
Writes enabled
Description
Erase setup cleared
Erase setup
[Setting condition]
When SWE = 1
Description
Program setup cleared
Program setup
[Setting condition]
When SWE = 1
SWE
R/W
6
0
ESU
R/W
5
0
PSU
R/W
4
0
R/W
EV
3
0
R/W
PV
2
0
R/W
Rev.6.00 Oct.28.2004 page 627 of 1016
1
E
0
R/W
0
P
0
(Initial value)
(Initial value)
(Initial value)
REJ09B0138-0600H
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