R4F24268NVRFQV Renesas Electronics America, R4F24268NVRFQV Datasheet - Page 291
R4F24268NVRFQV
Manufacturer Part Number
R4F24268NVRFQV
Description
MCU 256KB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet
1.R4F24268NVZFQV.pdf
(1406 pages)
Specifications of R4F24268NVRFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R4F24268NVRFQV
Manufacturer:
Renesas Electronics America
Quantity:
135
Company:
Part Number:
R4F24268NVRFQV
Manufacturer:
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Quantity:
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H8S/2426, H8S/2426R, H8S/2424 Group
6.8.10
By setting the SDWCD bit of the DRACCR to 1, the CAS latency control cycle (Tc1) that is
inserted by the WTCRB register in the write access of the synchronous DRAM can be disabled.
Disabling the CAS latency control cycle can reduce the write-access cycle count as compared to
synchronous DRAM read access. Figure 6.60 shows the write access timing when the CAS
latency control cycle is disabled.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Figure 6.60 Example of Write Access Timing when CAS Latency Control Cycle Is Disabled
DQMU, DQML
Precharge-sel
Address bus
Bus Cycle Control in Write Cycle
SDRAMφ
Data bus
CKE
RAS
CAS
WE
φ
Column address
PALL
T
p
Row address
Row address
(SDWCD = 1)
ACTV
T
r
High
NOP
T
c1
Column address
Section 6 Bus Controller (BSC)
T
WRIT
c2
Page 261 of 1372
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