R4F24268NVRFQV Renesas Electronics America, R4F24268NVRFQV Datasheet - Page 279
R4F24268NVRFQV
Manufacturer Part Number
R4F24268NVRFQV
Description
MCU 256KB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet
1.R4F24268NVZFQV.pdf
(1406 pages)
Specifications of R4F24268NVRFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Company:
Part Number:
R4F24268NVRFQV
Manufacturer:
Renesas Electronics America
Quantity:
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H8S/2426, H8S/2426R, H8S/2424 Group
(2)
When DRAM space is accessed in DMAC or EXDMAC single address transfer mode, full access
(normal access) is always performed. With the DRAM interface, the DACK or EDACK output
goes low from the T
In modes other than DMAC or EXDMAC single address transfer mode, burst access can be used
when accessing DRAM space.
Figure 6.54 shows the DACK or EDACK output timing for the DRAM interface when DDS = 0 or
EDDS = 0.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Read
Write
Note: n = 2 to 5
Figure 6.54 Example of DACK/EDACK Output Timing when DDS = 0 or EDDS = 0
When DDS = 0 or EDDS = 0
DACK or EDACK
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
r
state.
T
p
Row address
(RAST = 0, CAST = 1)
High
High
T
r
T
c1
Column address
T
c2
Section 6 Bus Controller (BSC)
T
c3
Page 249 of 1372
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