R4F24268NVRFQV Renesas Electronics America, R4F24268NVRFQV Datasheet - Page 257
R4F24268NVRFQV
Manufacturer Part Number
R4F24268NVRFQV
Description
MCU 256KB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet
1.R4F24268NVZFQV.pdf
(1406 pages)
Specifications of R4F24268NVRFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Manufacturer
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Price
Company:
Part Number:
R4F24268NVRFQV
Manufacturer:
Renesas Electronics America
Quantity:
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Company:
Part Number:
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H8S/2426, H8S/2426R, H8S/2424 Group
6.7.6
The column address output cycle can be changed from 2 states to 3 states by setting the CAST bit
to 1 in DRAMCR. Use the setting that gives the optimum specification values (CAS pulse width,
etc.) according to the DRAM connected and the operating frequency of this LSI. Figure 6.34
shows an example of the timing when a 3-state column address output cycle is selected.
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Read
Write
Note: n = 2 to 5
Figure 6.34 Example of Access Timing with 3-State Column Address Output Cycle
Column Address Output Cycle Control
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
T
p
Row address
(RAST = 0)
High
High
T
r
T
c1
Column address
T
c2
Section 6 Bus Controller (BSC)
T
c3
Page 227 of 1372
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