R4F24268NVRFQV Renesas Electronics America, R4F24268NVRFQV Datasheet - Page 209
R4F24268NVRFQV
Manufacturer Part Number
R4F24268NVRFQV
Description
MCU 256KB FLASH 48K 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2400r
Datasheet
1.R4F24268NVZFQV.pdf
(1406 pages)
Specifications of R4F24268NVRFQV
Core Processor
H8S/2600
Core Size
16/32-Bit
Speed
33MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
48K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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R4F24268NVRFQV
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H8S/2426, H8S/2426R, H8S/2424 Group
6.3.10
DRACCR is used to set the DRAM/synchronous DRAM interface bus specifications.
Note: The synchronous DRAM interface is not supported by the H8S/2426 Group and H8S/2424
REJ09B0466-0350 Rev. 3.50
Jul 09, 2010
Bit
15
14
13
12
11
Group. The DRAM interface is not supported by the 5-V version.
Bit Name
DRMI
⎯
TPC1
TPC0
SDWCD
DRAM Access Control Register (DRACCR)
Initial Value
0
0
0
0
0*
R/W
R/W
R/W
R/W
R/W
R/W
Description
Idle Cycle Insertion
An idle cycle can be inserted after a
DRAM/synchronous DRAM access cycle when a
continuous normal space access cycle follows a
DRAM/synchronous DRAM access cycle. Idle
cycle insertion conditions, setting of number of
states, etc., comply with settings of bits ICIS2,
ICIS1, ICIS0, and IDLC in BCR register
0: Idle cycle not inserted
1: Idle cycle inserted
Reserved
This bit can be read from or written to. However,
the write value should always be 0.
Precharge State Control
These bits select the number of states in the RAS
precharge cycle in normal access and refreshing.
00: 1 state
01: 2 states
10: 3 states
11: 4 states
CAS Latency Control Cycle Disabled during
Continuous Synchronous DRAM Space Write
Access
Disables CAS latency control cycle (Tcl) inserted
by WTCRB (H) settings during synchronous
DRAM write access (see figure 6.5).
0: Enables CAS latency control cycle
1: Disables CAS latency control cycle
Section 6 Bus Controller (BSC)
Page 179 of 1372
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