MC9S08GB60ACFUE Freescale Semiconductor, MC9S08GB60ACFUE Datasheet - Page 263
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MC9S08GB60ACFUE
Manufacturer Part Number
MC9S08GB60ACFUE
Description
IC MCU 60K FLASH 4K RAM 64-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.MC9S08GT60ACFDER.pdf
(302 pages)
Specifications of MC9S08GB60ACFUE
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
56
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Processor Series
S08GB
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
4 KB
Interface Type
SCI/SPI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
56
Number Of Timers
8
Operating Supply Voltage
0 V to 1.8 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
M68EVB908GB60E, M68DEMO908GB60E
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
For Use With
M68DEMO908GB60E - BOARD DEMO MC9S08GB60M68EVB908GB60E - BOARD EVAL FOR MC9S08GB60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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A.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) This device
was qualified to AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses,
the device no longer meets the device specification requirements. Complete dc parametric and functional
testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
A.5
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Freescale Semiconductor
ESD Target for Machine Model (MM)
ESD Target for Human Body Model (HBM)
Supply voltage (run, wait and stop modes.)
Minimum RAM retention supply voltage applied to
V
Low-voltage detection threshold — high range
Low-voltage detection threshold — low range
Low-voltage warning threshold — high range
DD
MM circuit description
HBM circuit description
0 < f
0 < f
Bus
Bus
< 8 MHz
< 20 MHz
Electrostatic Discharge (ESD) Protection Characteristics
DC Characteristics
Parameter
Parameter
(Temperature Range = –40 to 85°C Ambient)
Table A-4. DC Characteristics (Sheet 1 of 3)
Table A-3. ESD Protection Characteristics
(V
(V
(V
(V
(V
(V
DD
DD
DD
DD
DD
DD
falling)
rising)
falling)
rising)
falling)
rising)
MC9S08GB60A Data Sheet, Rev. 2
Symbol
Symbol
V
V
V
V
V
V
THHBM
THMM
V
LVWH
LVDH
LVDL
RAM
DD
2.08
2.08
2.16
1.80
1.88
2.35
2.35
1.0
Min
1.8
2
Typical
Value
2000
2.19
1.82
1.90
2.40
2.40
200
2.1
Appendix A Electrical Characteristics
1
Max
2.27
1.91
1.99
3.6
3.6
2.2
2.5
2.5
—
Unit
Unit
V
V
V
V
V
V
V
263
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