AT90PWM1-16MU Atmel, AT90PWM1-16MU Datasheet - Page 226
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AT90PWM1-16MU
Manufacturer Part Number
AT90PWM1-16MU
Description
IC AVR PWM 8KB FLASH 16MHZ 32QFN
Manufacturer
Atmel
Series
AVR® 90PWM Lightingr
Datasheet
1.AT90PWM1-16SU.pdf
(297 pages)
Specifications of AT90PWM1-16MU
Core Processor
AVR
Core Size
8-Bit
Speed
16MHz
Connectivity
SPI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
19
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
32-QFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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22.8.2
22.8.3
22.8.4
226
AT90PWM1
Considerations for Efficient Programming
Chip Erase
Programming the Flash
1. Set Prog_enable pins listed in Table 80. to “0000”, RESET pin to “0” and Vcc to 0V.
2. Apply 4.5 - 5.5V between VCC and GND.
3. Monitor Vcc, and as soon as Vcc reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
5. Wait until Vcc actually reaches 4.5 -5.5V before giving any parallel programming
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
•
•
•
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see
program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
B. Load Address Low byte
applied to ensure the Prog_enable Signature has been latched.
commands.
The command needs only be loaded once when writing or reading multiple memory
locations.
Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
EESAVE Fuse is programmed) and Flash after a Chip Erase.
Address high byte needs only be loaded before programming or reading a new 256 word
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
Table 83 on page
(1)
memories plus Lock bits. The Lock bits are
225. When programming the Flash, the
4378C–AVR–09/08
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