MC908QY8CDWE Freescale Semiconductor, MC908QY8CDWE Datasheet - Page 34

• Manufacturer Part Number: MC908QY8CDWE
• Description: IC MCU 8BIT 8K FLASH 16-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908QY8CDWE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: LVD, POR, PWM
• Number Of I /o: 13
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Processor Series: HC08QY
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 13
• Number Of Timers: 2
• Operating Supply Voltage: 3 V to 5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 4-ch x 10-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Memory
This program sequence is repeated throughout the memory until all data is programmed.
2.6.5 FLASH Protection
Due to the ability of the on-board charge pump to erase and program the FLASH memory in the target
application, provision is made to protect blocks of memory from unintentional erase or program operations
due to system malfunction. This protection is done by use of a FLASH block protect register (FLBPR).
The FLBPR determines the range of the FLASH memory which is to be protected. The range of the
protected area starts from a location defined by FLBPR and ends to the bottom of the FLASH memory
($FFFF). When the memory is protected, the HVEN bit cannot be set in either ERASE or PROGRAM
operations.
When the FLBPR is programmed with all 0 s, the entire memory is protected from being programmed and
erased. When all the bits are erased (all 1’s), the entire memory is accessible for program and erase.
When bits within the FLBPR are programmed, they lock a block of memory. The address ranges are
shown in
$FF, any erase or program of the FLBPR or the protected block of FLASH memory is prohibited. Mass
erase is disabled whenever any block is protected (FLBPR does not equal $FF). The FLBPR itself can be
erased or programmed only with an external voltage, V
allows entry from reset into the monitor mode.
34
10. Clear the PGM bit
11. Wait for time, t
12. Clear the HVEN bit.
13. After time, t
1. The time between each FLASH address change, or the time between the last FLASH address programmed to clearing
6. Wait for a time, t
7. Write data to the FLASH address being programmed
8. Wait for time, t
9. Repeat step 7 and 8 until all desired bytes within the row are programmed.
PGM bit, must not exceed the maximum programming time, t
2.6.6 FLASH Block Protect
The COP register at location $FFFF should not be written between steps
5-12, when the HVEN bit is set. Since this register is located at a valid
FLASH address, unpredictable behavior may occur if this location is written
while HVEN is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory
In performing a program or erase operation, the FLASH block protect
register must be read after setting the PGM or ERASE bit and before
asserting the HVEN bit.
RCV
PROG
NVH
, the memory can be accessed in read mode again.
PGS
Characteristics.
.
(1)
.
.
.
MC68HC908QB8 Data Sheet, Rev. 3
Register. Once the FLBPR is programmed with a value other than
NOTE
NOTE
NOTE
PROG
TST
PROG
, present on the IRQ pin. This voltage also
maximum.
(1)
.
maximum, see
18.17
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