MC908QY8CDWE Freescale Semiconductor, MC908QY8CDWE Datasheet - Page 33

IC MCU 8BIT 8K FLASH 16-SOIC

MC908QY8CDWE

Manufacturer Part Number
MC908QY8CDWE
Description
IC MCU 8BIT 8K FLASH 16-SOIC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC908QY8CDWE

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Peripherals
LVD, POR, PWM
Number Of I /o
13
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC (0.300", 7.5mm Width)
Processor Series
HC08QY
Core
HC08
Data Bus Width
8 bit
Data Ram Size
256 B
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
13
Number Of Timers
2
Operating Supply Voltage
3 V to 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
Minimum Operating Temperature
- 40 C
On-chip Adc
4-ch x 10-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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2.6.3 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory to read as a 1:
2.6.4 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 32 consecutive bytes
starting from addresses $XX00, $XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0, or $XXE0. Use the
following step-by-step procedure to program a row of FLASH memory
Figure 2-4
Freescale Semiconductor
10. After time, t
1. When in monitor mode, with security sequence failed (see
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE and MASS bits.
8. Wait for a time, t
9. Clear the HVEN bit.
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range desired.
4. Wait for a time, t
5. Set the HVEN bit.
stead of any FLASH address.
address and data for programming.
shows a flowchart of the programming algorithm.
Mass erase is disabled whenever any block is protected (FLBPR does not
equal $FF).
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, other unrelated operations may
occur between the steps.
A mass erase will erase the internal oscillator trim value at $FFC0.
Do not program any byte in the FLASH more than once after a successful
erase operation. Reprogramming bits to a byte which is already
programmed is not allowed without first erasing the page in which the byte
resides or mass erasing the entire FLASH memory. Programming without
first erasing may disturb data stored in the FLASH.
RCV
, the memory can be accessed in read mode again.
NVS
MErase
NVHL
NVS
.
.
.
.
MC68HC908QB8 Data Sheet, Rev. 3
(1)
CAUTION
within the FLASH memory address range.
NOTE
NOTE
NOTE
17.3.2
Security), write to the FLASH block protect register in-
FLASH Memory (FLASH)
33

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