MC908QY8CDWE Freescale Semiconductor, MC908QY8CDWE Datasheet - Page 32

IC MCU 8BIT 8K FLASH 16-SOIC

MC908QY8CDWE

Manufacturer Part Number
MC908QY8CDWE
Description
IC MCU 8BIT 8K FLASH 16-SOIC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC908QY8CDWE

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Peripherals
LVD, POR, PWM
Number Of I /o
13
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC (0.300", 7.5mm Width)
Processor Series
HC08QY
Core
HC08
Data Bus Width
8 bit
Data Ram Size
256 B
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
13
Number Of Timers
2
Operating Supply Voltage
3 V to 5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, M68CBL05AE, DEMO908QB8, DEMO908QC16
Minimum Operating Temperature
- 40 C
On-chip Adc
4-ch x 10-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Connectivity
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Memory
ERASE — Erase Control Bit
PGM — Program Control Bit
2.6.2 FLASH Page Erase Operation
Use the following procedure to erase a page of FLASH memory. A page consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 48-byte user interrupt vectors area also
forms a page. Any FLASH memory page can be erased alone.
32
10. After time, t
1. Set the ERASE bit and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the address range of the block to be erased.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
The COP register at location $FFFF should not be written between steps
5-9, when the HVEN bit is set. Since this register is located at a valid
FLASH address, unpredictable behavior may occur if this location is written
while HVEN is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, other unrelated operations may
occur between the steps.
A page erase of the vector page will erase the internal oscillator trim value
at $FFC0.
RCV
, the memory can be accessed in read mode again.
NVS
Erase
NVH
.
.
.
MC68HC908QB8 Data Sheet, Rev. 3
CAUTION
NOTE
NOTE
Freescale Semiconductor

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