MC908JB16DWE Freescale Semiconductor, MC908JB16DWE Datasheet - Page 324

• Manufacturer Part Number: MC908JB16DWE
• Description: IC MCU 16K FLASH 6MHZ USB 28SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908JB16DWE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 6MHz
• Connectivity: SCI, USB
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 21
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 384 x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 28-SOIC (7.5mm Width)
• Processor Series: HC08JB
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 384 B
• Interface Type: I2C/SCI/SPI/USB
• Maximum Clock Frequency: 12 MHz
• Number Of Programmable I/os: 21
• Number Of Timers: 4
• Operating Supply Voltage: 5.5 V
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
• Minimum Operating Temperature: 0 C
• Controller Family/series: HC08
• No. Of I/o's: 21
• Ram Memory Size: 384Byte
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: I2C, SCI, SPI
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
20.14 FLASH Memory Characteristics
Technical Data
324
Notes:
RAM data retention voltage
FLASH block size
FLASH programming size
FLASH read bus clock frequency
FLASH block erase time
FLASH mass erase time
FLASH PGM/ERASE to HVEN set up time
FLASH high-voltage hold time
FLASH high-voltage hold time (mass erase)
FLASH program hold time
FLASH program time
FLASH return to read time
FLASH cumulative program hv period
FLASH row erase endurance
FLASH row program endurance
FLASH data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. t
5. t
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
memory.
memory.
HVEN to logic 0.
erase / program cycles.
erase / program cycles.
specified.
rcv
Read
HV
is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
is defined as the cumulative high voltage programming time to the same row before next erase.
is defined as the frequency range for which the FLASH memory can be read.
Characteristic
(8)
(6)
(7)
MErase
Erase
(Min), there is no erase-disturb, but it reduced the endurance of the FLASH
(Min), there is no erase-disturb, but it reduces the endurance of the FLASH
Electrical Specifications
t
Symbol
MErase
t
f
Erase
Read
V
t
t
t
rcv
HV
t
t
t
t
Prog
nvhl
RDR
—
nvh
pgs
—
—
—
nvs
—
(4)
(5)
(1)
(2)
(3)
32 k
Min
200
100
10k
10k
1.3
10
10
20
10
—
5
5
1
MC68HC908JB16
512
Freescale Semiconductor
64
8.4 M
Max
40
—
—
—
—
—
—
—
—
—
—
—
8
—
Cycles
Cycles
Bytes
Bytes
Years
Rev. 1.1
Unit
ms
Hz
ms
ms
µs
µs
µs
µs
µs
µs
V