MC68HC908JB8JPE Freescale Semiconductor, MC68HC908JB8JPE Datasheet - Page 57

• Manufacturer Part Number: MC68HC908JB8JPE
• Description: IC MCU FLASH 8BIT 8K 20-DIP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908JB8JPE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 3MHz
• Connectivity: USB
• Peripherals: LVD, POR, PWM
• Number Of I /o: 13
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 20-DIP (0.300", 7.62mm)
• Controller Family/series: HC08
• No. Of I/o's: 13
• Ram Memory Size: 256Byte
• Cpu Speed: 3MHz
• No. Of Timers: 1
• Embedded Interface Type: USB
• Rohs Compliant: Yes
• Processor Series: HC08JB
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: USB
• Maximum Clock Frequency: 3 MHz
• Number Of Programmable I/os: 37
• Number Of Timers: 2
• Operating Supply Voltage: 4 V to 5.5 V
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Details

4.6 FLASH Mass Erase Operation
MC68HC908JB8•MC68HC08JB8•MC68HC08JT8 — Rev. 2.3
Freescale Semiconductor
NOTE:
Use the following procedure to erase the entire FLASH memory:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
1. Set both the ERASE bit and the MASS bit in the FLASH control
2. Write any data to any FLASH address within the address range
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
register.
$FFE0–$FFFF.
again.
FLASH Memory
rcv
(1 µs), the memory can be accessed in read mode
me
nvs
nvh1
(2 ms).
(5 µs).
(100 µs).
FLASH Mass Erase Operation
FLASH Memory
Technical Data
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