PESD3V3S4UF,115 NXP Semiconductors, PESD3V3S4UF,115 Datasheet - Page 6

• Manufacturer Part Number: PESD3V3S4UF,115
• Description: DIODE QUAD ESD PROTECTION 6-XSON
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD3V3S4UF,115

• Package / Case: 6-XSON (Micropak™), SOT-886
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.32V
• Power (watts): 110W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Channels: 4 Channels
• Clamping Voltage: 11 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Peak Surge Current: 10 A
• Peak Pulse Power Dissipation: 110 W
• Capacitance: 110 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061196115; PESD3V3S4UF T/R; PESD3V3S4UF T/R

NXP Semiconductors
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Fig 7. V-I characteristics for a unidirectional ESD protection diode
Rev. 01 — 17 January 2008
PESD3V3S4UF; PESD5V0S4UF
V
CL
V
BR
Unidirectional quadruple ESD protection diode arrays
V
RWM
P-N
+
I
I
I
I
RM
R
PP
006aaa407
V
© NXP B.V. 2008. All rights reserved.
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