PESD3V3S4UF,115 NXP Semiconductors, PESD3V3S4UF,115 Datasheet - Page 5
![DIODE QUAD ESD PROTECTION 6-XSON](/photos/1/39/13915/6-xson_sot886_pkg_sml.jpg)
PESD3V3S4UF,115
Manufacturer Part Number
PESD3V3S4UF,115
Description
DIODE QUAD ESD PROTECTION 6-XSON
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PESD3V3S4UF115.pdf
(13 pages)
Specifications of PESD3V3S4UF,115
Package / Case
6-XSON (Micropak™), SOT-886
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.32V
Power (watts)
110W
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Channels
4 Channels
Clamping Voltage
11 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Peak Surge Current
10 A
Peak Pulse Power Dissipation
110 W
Capacitance
110 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.05(Max) mm W x 1.5(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061196115
PESD3V3S4UF T/R
PESD3V3S4UF T/R
PESD3V3S4UF T/R
PESD3V3S4UF T/R
NXP Semiconductors
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Fig 3. Peak pulse power as a function of exponential
Fig 5. Diode capacitance as a function of reverse
P
(pF)
(1) PESD3V3S4UF
(2) PESD5V0S4UF
(W)
C
PP
120
10
10
10
d
10
80
40
1
0
4
3
2
T
pulse duration; typical values
f = 1 MHz; T
voltage; typical values
1
0
amb
= 25 C
10
2
amb
= 25 C
(1)
(2)
10
4
2
10
6
3
006aab146
006aab147
V
t
p
R
( s)
(V)
Rev. 01 — 17 January 2008
10
PESD3V3S4UF; PESD5V0S4UF
8
4
Unidirectional quadruple ESD protection diode arrays
Fig 4. Relative variation of peak pulse power as a
Fig 6. Relative variation of reverse current as a
P
PP(25 C)
I
R(25 C)
P
PP
I
10
R
1.2
0.8
0.4
10
1
0
1
function of junction temperature; typical values
function of junction temperature; typical values
0
75
25
50
25
100
75
150
© NXP B.V. 2008. All rights reserved.
125
001aaa633
T
006aab148
T
j
( C)
j
( C)
200
175
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