ZUMT619 Diodes Inc, ZUMT619 Datasheet

TRANSISTOR, NPN, 50V, 1A, 385mW, SOT-323

ZUMT619

Manufacturer Part Number
ZUMT619
Description
TRANSISTOR, NPN, 50V, 1A, 385mW, SOT-323
Manufacturer
Diodes Inc
Datasheet
1.ZUMT619.pdf (3 pages)

Specifications of ZUMT619

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Transition Frequency Typ Ft
215MHz
Power Dissipation Pd
385mW
Dc Collector Current
1A
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
ZUMT619TC
Manufacturer:
HIT
Quantity:
2 890
Super323
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
*
*
*
*
*
APPLICATIONS
*
*
ABSOLUTE MAXIMUM RATINGS.
† Recommended P
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature
Range
DEVICE TYPE
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT619
500mW POWER DISSIPATION
I
2A Peak Pulse Current
Excellent H
Extremely Low Equivalent On Resistance; R
LCD backlighting inverter circuits
Boost functions in DC-DC converters
C
CONT 1A
FE
COMPLEMENT
tot
SOT323 NPN SILICON POWER
Characteristics Up To 2A (pulsed)
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
ZUMT720
amb
=25°C
PARTMARKING
SYMBOL
V
V
V
I
I
I
P
T
CM
C
B
tot
j
CBO
CEO
EBO
:T
stg
T63
CE(sat)
-55 to +150
160m at 1A
VALUE
385 †
500 ‡
200
1.0
R
50
50
5
2
CE(sat)
ZUMT619
UNIT
mW
mA
°C
A
A
V
V
V

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ZUMT619 Summary of contents

Page 1

... Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. CE(sat) PARTMARKING R CE(sat) T63 160m at 1A SYMBOL VALUE V 50 CBO V 50 CEO V 5 EBO 1 200 B P 385 † tot 500 ‡ -55 to +150 j stg ZUMT619 UNIT °C ...

Page 2

... ZUMT619 ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL Collector-Base V (BR)CBO Breakdown Voltage Collector-Emitter V (BR)CEO Breakdown Voltage Emitter-Base V (BR)EBO Breakdown Voltage Collector Cut-Off I CBO Current Emitter Cut-Off I EBO Current Collector Emitter I CES Cut-Off Current Collector-Emitter V CE(sat) Saturation Voltage Base-Emitter V BE(sat) Saturation Voltage Base-Emitter V BE(on) ...

Page 3

... IC/IB=50 0.8 0.6 0.4 0 100m -55°C +25°C +100°C +150°C 10m 1 10 100m V CE ZUMT619 -55°C +25°C +100°C +150°C 10m 100m Collector Current ( CE(sat) C -55°C +25°C +100°C +150°C 10m 100m Collector Current ( BE(sat) C ...

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