cy62128e Cypress Semiconductor Corporation., cy62128e Datasheet

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cy62128e

Manufacturer Part Number
cy62128e
Description
1-mbit 128k X 8 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Cypress Semiconductor Corporation
Document #: 38-05485 Rev. *E
Features
Logic Block Diagram
Note
1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at
• Very high speed: 45 ns
• Temperature ranges
• Voltage range: 4.5V–5.5V
• Pin compatible with CY62128B
• Ultra low standby power
• Ultra low active power
• Easy memory expansion with CE
• Automatic power down when deselected
• CMOS for optimum speed and power
• Offered in standard Pb-free 32-pin STSOP, 32-pin SOIC,
— Industrial: –40°C to +85°C
— Automotive-A: –40°C to +85°C
— Automotive-E: –40°C to +125°C
— Typical standby current: 1 µA
— Maximum standby current: 4 µA (Industrial)
— Typical active current: 1.3 mA @ f = 1 MHz
and 32-pin TSOP I packages
CE 1
CE 2
WE
OE
A 0
A 1
A 2
A 3
A 4
A 5
A 6
A 7
A 8
A 9
A 10
A 11
1
, CE
2
and OE features
198 Champion Court
COLUMN DECODER
INPUT BUFFER
128K x 8
ARRAY
Functional Description
The CY62128E is a high performance CMOS static RAM
organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption when addresses are not toggling.
Placing the device into standby mode reduces power
consumption by more than 99% when deselected (CE
or CE
IO
deselected (CE
(OE HIGH), or a write operation is in progress (CE
CE
To write to the device, take Chip Enable (CE
HIGH) and Write Enable (WE) inputs LOW. Data on the eight
IO pins (IO
specified on the address pins (A
To read from the device, take Chip Enable (CE
HIGH) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins appears on
the IO pins.
7
POWER
2
DOWN
) are placed in a high impedance state when the device is
1-Mbit (128K x 8) Static RAM
HIGH and WE LOW)
2
LOW). The eight input and output pins (IO
San Jose
0
through IO
1
HIGH or CE
http://www.cypress.com.
,
CA 95134-1709
7
) is then written into the location
2
[1]
LOW), the outputs are disabled
CY62128E MoBL
0
through A
IO 4
IO 0
IO 1
IO 2
IO 3
IO 5
IO 6
IO 7
Revised May 07, 2007
16
1
).
1
LOW and CE
LOW and CE
408-943-2600
1
0
LOW and
through
1
HIGH
®
) in
®
2
2
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cy62128e Summary of contents

Page 1

... Document #: 38-05485 Rev. *E 1-Mbit (128K x 8) Static RAM Functional Description The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL portable applications such as cellular telephones ...

Page 2

... SS Product Portfolio Product Range V CC Min CY62128ELL Ind’l/Auto-A 4.5 CY62128ELL Auto-E 4.5 Notes 2. NC pins are not connected on the die. 3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured When used with a 100 pF capacitive load and resistive loads as shown on page 4, access times Document #: 38-05485 Rev ...

Page 3

... MHz CC(typ) (min) and 200 µs wait time after spec. Other inputs can be left floating. SB2 CCDR CY62128E MoBL Ambient [7] Range V CC Temperature –40°C to +85°C 4.5V to 5.5V Auto-E –40°C to +125° (Auto-E) Unit ...

Page 4

... DATA RETENTION MODE V V > 2.0V CC(min CDR > 100 µs or stable CC(min) CC(min) is LOW and CE is HIGH LOW; when CY62128E MoBL STSOP TSOP Unit Package Package °C/W 32.56 33.01 °C/W 3.59 3.42 90% 10% Fall Time = 1 V/ns Unit Ω Ω Ω V [3] ...

Page 5

... Test Loads and Waveforms” on page less than less than t , and t HZCE LZCE HZOE LZOE . All signals must be ACTIVE to initiate a write and any of these signals can IL CY62128E MoBL 55 ns (Auto-E) Unit Min Max ...

Page 6

... Document #: 38-05485 Rev. *E [16, 17 OHA DOE DATA VALID 50 SCE PWE t SD DATA VALID , transition HIGH. 2 ® CY62128E MoBL DATA VALID t HZOE t HZCE HIGH IMPEDANCE 50 Page [+] Feedback ...

Page 7

... WC t SCE PWE t SD DATA VALID Inputs/Outputs High-Z Deselect/Power down High-Z Deselect/Power down Data Out Read Data In Write High-Z Selected, Outputs Disabled CY62128E MoBL LZWE Mode Power Standby ( Standby ( Active ( Active (I ...

Page 8

... MAX. 0.004[0.102] 0.004[0.102] MIN. SEATING PLANE ® CY62128E MoBL Operating Range Industrial Automotive-A Automotive-E 0.047[1.193] 0.063[1.600] 0.023[0.584] 0.039[0.990] 51-85081-*B Page [+] Feedback ...

Page 9

... Package Diagrams (continued) Figure 2. 32-pin Shrunk Thin Small Outline Package (8 x 13.4 mm), 51-85094 Document #: 38-05485 Rev. *E ® CY62128E MoBL 51-85094-*D Page [+] Feedback ...

Page 10

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. ® CY62128E MoBL 51-85056-*D Page ...

Page 11

... SB1 SB2 CCDR Converted from Preliminary to Final Included Automotive Range and 55 ns speed bin Removed 35 ns speed bin Removed “L” version of CY62128E Removed Reverse TSOP I package from Product offering Changed I from and I CC (Typ) Changed I from 1 2.0 mA for MHz ...

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