MT16HTF25664HY-667E1 Micron Technology Inc, MT16HTF25664HY-667E1 Datasheet - Page 11

• Manufacturer Part Number: MT16HTF25664HY-667E1
• Description: MODULE DDR2 2GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF25664HY-667E1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1345

Table 9: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
Specifications and Conditions – 1GB (Continued)
Notes:
DD
),
t
RRD =
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
t
in IDD2P (CKE LOW) mode.
RRD (I
DD
), AL =
DD
),
t
t
RCD (I
RCD =
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
DD
t
RCD (I
) - 1 ×
DD
11
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/
2456
-800
1976
-667
© 2004 Micron Technology, Inc. All rights reserved.
I
DD
1856
-53E
Specifications
-40E
1816
Units
mA