VNQ05XSP16 STMicroelectronics, VNQ05XSP16 Datasheet - Page 9

• Manufacturer Part Number: VNQ05XSP16
• Description: IC SSR HIGH SIDE QUAD POWERSO16
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ05XSP16

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 110 mOhm
• Current - Peak Output: 7.5A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-16 Exposed Bottom Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

APPLICATION SCHEMATIC
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
The following is an indication on how to dimension the
R
where -I
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
battery situations) is:
P
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
D
GND
1) R
2) R
Notes: Input1,2,3,4, SELA, SELB, SENSENABLE have the same structure.
= (-V
resistor.
GND
GND
+5V
CC
GND
PROTECTION
C
A/D
C
R
)
2
FILTER
SENSE
/R
is the DC reverse ground pin current and can
600mV / (I
(-V
GND
CC
R
R
R
R
R
R
R
S(on)max
R
prot
prot
prot
prot
) / (-I
prot
prot
prot
prot
x C
C
PAR
PAR
GND
S(on)max
GND
* R
<10 s
)
(when V
NETWORK
GND
R
).
SENSE
) in the input thresholds
S(on)max
CC
<0: during reverse
C. SENSE
INPUT3
INPUT2
SELA
SESB
INPUT1
INPUT4
SENSENABLE
GND
becomes the
GND
AGAINST
only). This
GND
.
will
Solution 2: A diode (D
A resistor (R
D
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift ( 600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
LOAD DUMP PROTECTION
D
load dump peak voltage exceeds V
The same applies if the device will be subject to
transients on the V
shown in the ISO T/R 7637/1 table.
If a ground protection network is used and negative
transients are present on the V
will be pulled negative. ST suggests to insert a resistor
(R
The value of these resistors is a compromise between the
leakage current of C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of C I/Os.
For V
5k
Recommended R
C I/Os PROTECTION:
GND
ld
-V
prot
GND
is necessary (Voltage Transient Suppressor) if the
CCpeak
R
) in line to prevent the C I/Os pins to latch-up.
CCpeak
GND
if the device will be driving an inductive load.
R
prot
/I
latchup
V
= - 100V and I
GND
CC
65k .
D
=1k ) should be inserted in parallel to
prot
GND
CC
R
OUTPUT4
OUTPUT3
OUTPUT1
OUTPUT2
value is 10k
prot
GND
line that are greater than the ones
V
GND
) in the ground line.
latchup
(V
OH C
CC
-V
20mA; V
line, the control pins
IH
CC
VNQ05XSP16
-V
max DC rating.
GND
OH C
) / I
IHmax
D
4.5V
ld
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