QL4009-0PF100C ETC1 [List of Unclassifed Manufacturers], QL4009-0PF100C Datasheet - Page 11
QL4009-0PF100C
Manufacturer Part Number
QL4009-0PF100C
Description
9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
1.QL4009-0PF100C.pdf
(18 pages)
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Power-up Sequencing
© 2002 QuickLogic Corporation
The following requirements must be met when powering up the device:
(Refer to
An internal diode is present in-between V
•
•
•
When ramping up the power supplies keep (V
this recommendation can cause permanent damage to the device.
V
The power supply must take greater than or equal to 400 µs to reach V
V
CCIO
CC
/V
V
V
Figure 7
CCIO
CC
must lead V
CCIO
Internal Logic
Cells, RAM
blocks, etc
Figure 8: Internal Diode Between V
(V
earlier than 400 µs can cause the device to behave improperly.
CCIO
above)
-V
Figure 7: Power-up Requirements
V CC
CC
CC
)
MAX
when ramping the device.
400 us
Time
CC
V
CC
and V
CC
CCIO
CCIO
V CCIO
and V
QL4009 QuickRAM Data Sheet Rev B
, as shown in
-V
IO Cells
CCIO
CC
)
MAX
500 mV. Deviation from
Figure 8
CC
www.quicklogic.com
.
. Ramping to
•
•
•
•
•
•
11