maq591 Hope Microelectronics co., Ltd, maq591 Datasheet
maq591
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maq591 Summary of contents
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... MAQ591 SPECIFICATION PRODUCT: NPN 7.0GHz wideband transistor MODEL: H.K.HUIYEE ELECTRONICS INDUSTRY CO.,LTD Tel:+86-755-82973805 Fax:+86-755-82973550 MAQ591 S OT89 E-mail: sales@hoperf.com Page item can replace BF FQ591 Approved by: Checked by: Issued by: http://www.hoperf.com ...
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... MAQ591 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment. DESCRIPTION NPN wideband transistor in a SOT89 plastic package. QUICK REFERENCE DATA ...
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... MAQ591 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC total power dissipation tot T storage temperature stg T junction temperature j Note the temperature at the soldering point of the collector pin. ...
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... MAQ591 CHARACTERISTICS unless otherwise specified j SYMBOL PARAMETER V collector-base breakdown voltage I (BR)CBO V collector-emitter breakdown (BR)CES voltage V emitter-base breakdown voltage (BR)EBO I collector-base leakage current CBO h DC current gain FE C feedback capacitance re f transition frequency T G maximum unilateral power gain; UM note insertion power gain ...
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P tot ( 100 Fig.2 Power derating curve. 1.2 handbook, halfpage C re (pF) 0.8 0 MHz. C Fig.4 Feedback capacitance as ...
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P 25 handbook, halfpage gain (dB 900 MHz. CE Fig.6 Gain as a function of collector current; typical values. 40 handbook, halfpage gain (dB) 30 MSG 20 ...
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V = 700 mV amb Fig.9 Intermodulation distortion as function of collector current; typical values. MLD802 handbook, ...