NE83C92 NXP Semiconductors, NE83C92 Datasheet - Page 5

• Manufacturer Part Number: NE83C92
• Description: Low-power Coaxial Ethernet Transceiver
• Manufacturer: NXP Semiconductors

1. All typicals are for V
2. Measured on secondary side of isolation transformer (see Figure 2). The transformer has a 1:1 turn ratio with an inductance between 30
3. The rise and fall times are measured as the time required for the differential voltage to change from –225mV to +225mV, or +225mV to
4. Difference in propagation delay between rising and falling edges at TXO.
5. Not 100% tested in production.
Philips Semiconductors
TIMING CHARACTERISTICS
V
NOTES:
1995 May 1
EE
SYMBOL
Low-power coaxial Ethernet transceiver
and 100 H at 5MHz.
–225mV, respectively.
t
t
t
t
t
= –9V +6%; T
t
COFF
t
TOFF
t
t
t
RON
t
t
t
t
t
CON
f
HON
t
t
TST
t
t
t
t
TON
t
t
RHI
CHI
t
RM
HW
RD
RR
RF
OS
TD
TR
TM
CD
CP
RJ
TF
TS
JA
JR
Receiver start up delay RXI to RX (Figure 3)
First received bit on RX
First validly timed bit on RX
Receiver prop. delay RXI to RX
Differential output rise time on RX and CD
Differential output fall time on RX and CD
Differential output settling time on RX and CD
to V
Receiver and cable total jitter
Receiver high to idle time
Rise and fall time matching on RX+ and CD+
Transmitter start-up delay TX to TXO (Figure 5)
First transmitted bit on TXO
First validly timed bit
Transmitter prop delay TX to TXO
(see Figure 5)
Transmitter rise time 10% to 90% (see Figure 5)
Transmitter fall time 10% to 90% (see Figure 5)
t
Transmitter added skew
Transmitter turn on pulse width (see Figure 5)
Transmitter turn off pulse width (see Figure 5)
Collision turn on delay (see Figure 6)
Collision turn off delay (see Figure 6)
Collision high to idle time (see Figure 6)
Collision frequency (see Figure 6)
Collision signal pulse width (see Figure 6)
Heartbeat turn on delay (see Figure 7)
Heartbeat test duration (see Figure 7)
Jabber activation delay measured from TX to
CD (see Figure 8)
Jabber reset delay measured from TX to CD
(see Figure 8)
TF
A
= 0 to 70 C, unless otherwise specified
– t
OB
TR
EE
= 40mV
mismatch
= –9V and T
PARAMETER
2
(see Figure 4)
5
A
4,5
= 27 C.
1
. No external isolation diode on TXO.
2,3
2,3
Measured to +210mV
0V to –2V step at RXI
–2V to 0V step at RXI
Measured to +210mV
TEST CONDITIONS
V
V
V
V
V
V
TX
RXI
RXI
5
TX
TX
TX
+ = –1V peak
t
+ = 1V peak
+ = 1V peak
RF
= –2V peak
= –2V peak
= 1V peak
– t
RR
MIN
200
125
200
250
8.5
0.6
0.5
20
20
10
35
20
5
LIMITS
TYP
0.1
20
25
25
10
20
3
5
5
1
1
0
0
2
t
t
RON
TST
MAX
Product specification
11.5
850
200
850
650
NE83C92
1.6
1.5
50
50
30
30
35
13
16
70
60
5
7
7
2
6
2
2
2
+ 2
+2
UNIT
MHz
bits
bits
bits
bits
bits
bits
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s