BFQ67T NXP Semiconductors, BFQ67T Datasheet - Page 2

• Manufacturer Part Number: BFQ67T
• Description: Npn 8 Ghz Wideband Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
Wideband applications such as
satellite TV tuners and RF portable
communications equipment up to
2 GHz.
QUICK REFERENCE DATA
Note
1. T
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. T
2000 Mar 06
V
V
I
P
h
f
G
F
V
V
V
I
P
T
T
C
T
C
FE
SYMBOL
SYMBOL
stg
j
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) envelope.
CBO
CEO
tot
CBO
CEO
EBO
tot
NPN 8 GHz wideband transistor
UM
s
s
is the temperature at the soldering point of the collector pin.
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise figure
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN transistor in a plastic SOT416
(SC-75) package.
PINNING
PIN
1
2
3
base
emitter
collector
open emitter
open base
T
I
I
T
I
T
I
open emitter
open base
open collector
T
C
C
C
C
s
amb
amb
s
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
75 C; note 1
75 C; note 1
= 25 C
= 25 C
DESCRIPTION
2
CONDITIONS
CONDITIONS
CE
CE
CE
CE
= 8 V; f = 1 GHz
= 8 V; f = 2 GHz;
= 8 V; f = 1 GHz;
= 5 V; T
j
= 25 C 60
fpage
Marking code: V2.
MIN.
65
MIN.
Top view
Fig.1 SOT416.
1
100
8
13
1.3
TYP.
Product specification
20
10
2.5
50
150
+150
150
MAX.
3
20
10
50
150
BFQ67T
MAX.
MBK090
2
V
V
V
mA
mW
C
C
UNIT
V
V
mA
mW
GHz
dB
dB
UNIT