STY16NA90 STMicroelectronics, STY16NA90 Datasheet - Page 2

• Manufacturer Part Number: STY16NA90
• Description: N - Channel 900v - 0.5 Ohm - 16a - Max247 Extremely Low Gate Charge Power Mosfet
• Manufacturer: STMicroelectronics

STY16NA90
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/5
Symb ol
Symb ol
V
Symb ol
Symb ol
R
R
R
R
V
g
(BR)DSS
I
t hj-ca se
thc- si nk
C
t hj- amb
I
I
C
E
DS( on)
D(o n)
C
GS(th)
fs
I
DSS
GSS
AR
oss
AS
rss
iss
( )
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-Heatsink
with Conductive Grease
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero G ate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max)
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= Max Rating
= Max Rating
> I
= 10 V
> I
=
= 10 V I
case
DD
D(on)
D(on)
GS
30 V
= 50 V)
= 25
Test Cond ition s
Test Cond ition s
Test Cond ition s
x R
x R
I
D
f = 1 MHz
D
o
= 250 A
DS(on) max
DS(on) max
C unless otherwise specified)
= 8 A
T
c
= 125
V
I
GS
D
V
o
= 8 A
GS
C
= 0
= 0
Max
Max
Typ
Min.
Min.
Min.
2.25
900
16
15
Max Valu e
6400
3000
Typ .
Typ .
Typ .
0.42
0.05
600
150
0.5
40
16
3
8300
Max.
Max.
Max.
3.75
0.54
500
750
200
50
100
o
o
Un it
Un it
Un it
Unit
C/W
C/W
mJ
nA
pF
pF
pF
V
V
A
S
A
A
A