STY15NA100 STMicroelectronics, STY15NA100 Datasheet - Page 2

• Manufacturer Part Number: STY15NA100
• Description: N - Channel 1000v - 0.65 Ohm - 15a - Max247 Mosfet
• Manufacturer: STMicroelectronics

STY15NA100
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/5
Symbol
Symbol
V
Symbol
Symbol
R
R
R
R
V
g
(BR)DSS
I
thj-case
thj-amb
thc-sink
I
I
C
C
E
GS(th)
DS(on)
D(on)
fs
C
I
DSS
GSS
AR
AS
oss
rss
iss
( )
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-Heatsink
with Conductive Grease
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= Max Rating
= Max Rating x 0.8 T
> I
= 10 V
> I
=
= 10 V I
case
DD
D(on)
D(on)
GS
= 50 V)
30 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
D
f = 1 MHz
D
o
= 250 A
DS(on)max
DS(on)max
C unless otherwise specified)
= 7.5 A
V
c
I
GS
D
= 125
V
= 7.5 A
GS
= 0
Max
Max
= 0
Typ
o
C
1000
Min.
Min.
2.25
Min.
15
12
Max Value
7000
3000
Typ.
Typ.
Typ.
0.42
0.05
0.65
600
150
40
15
3
Max.
Max.
Max.
0.77
3.75
500
50
100
o
o
Unit
Unit
Unit
Unit
C/W
C/W
nA
pF
pF
pF
mJ
V
V
A
S
A
A
A