RJK2006DPE Renesas Electronics Corporation., RJK2006DPE Datasheet - Page 3

• Manufacturer Part Number: RJK2006DPE
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
Features
Outline
RENESAS Package code: PRSS0004AE-A
Absolute Maximum Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 1 of 7
Low on-resistance
Low leakage current
High speed switching
2. Value at Tc = 25 C
3. STch = 25 C, Tch
(Package name: LDPAK(L)
10 s, duty cycle
Item
RJK2006DPJ
1
2
3
4
150 C
1%
: PRSS0004AE-B
LDPAK(S)-(1)
RJK2006DPE
1
2
I
3
I
DR (pulse)
D (pulse)
Pch
Symbol
4
E
I
AP
V
V
AR
Tstg
Tch
ch-c
I
DSS
GSS
I
DR
Note3
D
Note3
Note2
Note1
Note1
: PRSS0004AE-C
LDPAK(S)-(2) )
RJK2006DPF
1
2
–55 to +150
3
4
Ratings
48.6
1.25
200
±30
100
100
100
150
40
40
27
G
REJ03G0512-0200
D
S
Nov 19, 2009
Unit
C/W
mJ
W
V
V
A
A
A
A
A
C
C
(Ta = 25°C)
Rev.2.00
1. Gate
2. Drain
3. Source
4. Drain