BSN254 NXP Semiconductors, BSN254 Datasheet - Page 2

• Manufacturer Part Number: BSN254
• Description: N-channel Enhancement Mode Vertical D-mos Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT54 (TO-92) variant package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum
2002 Feb 19
V
I
P
R
V
V
V
I
I
P
T
T
D
D
DM
stg
j
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown
Low R
Line current interruptor in telephone sets
Relay, high-speed and line transformer drivers.
DS
tot
GSth
DS
GSO
tot
DSon
N-channel enhancement mode
vertical D-MOS transistor
SYMBOL
SYMBOL
10
DSon
10 mm.
.
drain-source voltage (DC)
drain current (DC)
total power dissipation
drain-source on-state resistance I
gate-source threshold voltage
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
T
I
open drain
T
D
D
amb
amb
= 300 mA; V
= 1 mA; V
25 C
25 C; note 1
2
CONDITIONS
CONDITIONS
PINNING - SOT54 variant
handbook, halfpage
DS
note: various pinnings are available on request
GS
= V
PIN
= 10 V
1
2
3
GS
1
Fig.1 Simplified outline and symbol.
2
3
gate
drain
source
BSN254
2.8
55
BSN254; BSN254A
TYP.
MIN.
DESCRIPTION
MAM146
source
gate
drain
Product specification
250
310
1
5
2
250
310
1.25
1
+150
150
20
g
MAX.
MAX.
BSN254A
d
s
V
mA
W
V
V
V
mA
A
W
C
C
UNIT
UNIT