FPD2250SOT89E Filtronic, FPD2250SOT89E Datasheet
FPD2250SOT89E
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FPD2250SOT89E Summary of contents
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... Output Power (P1dB) • Small-Signal Gain (SSG) • 1.0 dB Noise Figure • 44 dBm Output IP3 • 50% Power-Added Efficiency • FPD2250SOT89E - RoHS compliant ENERAL ESCRIPTION The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor utilizes a 0.25 µm x 2250 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography ...
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... P , TOT DC IN OUT : RF Input Power Output Power IN OUT PACK = 2.5W – (0.02 x (65 – 22)) = 1.64W TOT 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 Datasheet v3 BSOLUTE AXIMUM 8V -3V IDss 22mA 525mW 175°C -55°C to 150°C 2 ...
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... I-V curves VG=-0.25V VG=0V presented above). generally measurements, even in stabilized circuits. 5.0 5.5 6.0 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 Drain Efficiency and PAE VDS = 5V IDS = 50% IDSS 1.85 GHz PAE Eff ...
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... S ): YSTEM Swp Max 8GHz 7 GHz S22 Swp Min 0.5GHz 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 Swp Max 23dBm 24dBm 26dBm 25dBm 27dBm 28dBm 29dBm Swp Min 900 MHz ...
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... Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 Datasheet v3.0 S12a S22m S22a 46.5 0.459 -159.0 44.3 0.450 -167.9 42.7 0.455 -176.0 41.6 0.445 178.5 40 ...
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... Application Notes and design data including S- parameters are available on request. D ISCLAIMERS This product is not designed for use in any space based or life sustaining/supporting equipment. O RDERING P ART N UMBER FPD2250SOT89 FPD2250SOT89E FPD2250SOT89CE : 6 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Email: sales@filcs.com FPD2250SOT89 P : RECAUTIONS devices care handling. ...