AP92U03GMT-HF Advanced Power Electronics Corp., AP92U03GMT-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP92U03GMT-HF

Manufacturer Part Number
AP92U03GMT-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP92U03GMT-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4
Rds(on) / Max(m?) Vgs@4.5v
6
Qg (nc)
30
Qgs (nc)
6
Qgd (nc)
16
Id(a)
90
Pd(w)
5
Configuration
Single N
Package
PMPAK 5x6

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP92U03GMT-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
AP92U03GMT-HF
Manufacturer:
APEC
Quantity:
3 431
Company:
Part Number:
AP92U03GMT-HF
Quantity:
7 799
▼ Simple Drive Requirement
▼ SO-8 Compatible with Heatsink
▼ Low On-resistance
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
I
P
P
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
D
D
D
DM
STG
J
DS
GS
D
D
AS
@T
@T
@T
@T
@T
C
A
A
Symbol
Symbol
C
A
=25℃
=70℃
=25℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
4
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
3
Halogen-Free Product
-55 to 150
-55 to 150
AP92U03GMT-HF
S
Rating
BV
R
I
D
S
+20
240
30
90
28
22
50
45
DS(ON)
S
5
DSS
G
Value
2.5
25
PMPAK 5x6
D
D
200911201
4mΩ
D
Units
Units
℃/W
℃/W
30V
90A
W
W
mJ
D
V
V
A
A
A
A
1

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AP92U03GMT-HF Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP92U03GMT-HF Halogen-Free Product BV 30V DSS R 4mΩ DS(ON) I 90A □ ...

Page 2

... AP92U03GMT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.0 I =30A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.2 1.4 -50 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP92U03GMT-HF 10V o T =150 C C 7.0V 6.0V 5.0V V =4.0V G 2.0 3.0 4.0 5.0 6.0 , Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 ...

Page 4

... AP92U03GMT- =20A D V =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 Operation in this 100 area limited by R DS(ON = Single Pulse 1 0.01 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...

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