STPS640C STMicroelectronics, STPS640C Datasheet - Page 2

• Manufacturer Part Number: STPS640C
• Description: Power Schottky Rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS640C

• Insulated Package: TO-220FPAB

Characteristics
1
2/9
Characteristics
Table 1.
Table 2.
When the diodes 1 and 2 are used simultaneously :
Δ
Table 3.
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x I
Symbol
Symbol
Symbol
I
Tj(diode 1) = P(diode1) x R
R
V
F(RMS)
P
dV/dt
I
I
R
I
V
F(AV)
T
RRM
I
FSM
ARM
th (j-c)
RRM
R
T
F
stg
th(c
(1)
j
(1)
)
Repetitive peak reverse voltage
RMS forward voltage
Average forward current δ = 0.5
Surge non repetitive forward
current
Repetitive peak reverse current
Repetitive peak avalanche power t
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Reverse leakage current
Forward voltage drop
Junction to case
Coupling
F(AV)
Absolute ratings (limiting values, per diode)
Thermal resistances
Static electrical characteristics (per diode)
+ 0.050 I
Parameter
F
2
(RMS)
th(j-c)
(Per diode) + P(diode 2) x R
Parameter
Parameter
TO-220AB / DPAK
TO-220FPAB
TO-220AB
TO-220FPAB
T
T
T
T
T
T
j
j
j
j
j
j
= 25° C
= 125° C
= 25° C
= 25° C
= 125° C
= 125° C
TO-220AB /TO-220FPAB
DPAK
TO-220AB
TO-220FPAB
DPAK
t
t
p
p
p
Test Conditions
= 2 µs square F = 1 kHz
= 10 ms Sinusoidal
= 1 µs T
j
= 25° C
V
I
I
I
I
F
F
F
F
R
= 3 A
= 6 A
= 3 A
= 6 A
= V
Per diode
Total
Per diode
Total
RRM
T
T
T
c
c
c
th(c)
= 135° C
= 130° C
= 120° C
Min.
-65 to + 150
Typ.
0.67
0.5
2
Value
10000
Value
1300
5.5
5.5
5.2
0.5
150
40
10
75
3
3
6
3
1
Max.
0.63
0.84
0.57
0.72
100
10
STPS640C
°C/W
°C/W
Unit
V/µs
Unit
° C
° C
Unit
W
V
A
A
A
A
mA
µA
V