BAV199W NXP Semiconductors, BAV199W Datasheet - Page 5

• Manufacturer Part Number: BAV199W
• Description: Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
1999 May 11
handbook, halfpage
handbook, full pagewidth
Low-leakage double diode
V
(1) Maximum values.
(2) Typical values.
Fig.5
(1) I
R
(nA)
I R
10
10
10
V = V
10
= 75 V.
10
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
R
1
2
1
2
3
R = 50
= 1 mA.
S
0
R
Reverse current as a function of junction
temperature; per diode.
I x R
F
Ω
S
(1)
(2)
50
r
= 0.35 ns.
100
I F
D.U.T.
Fig.7 Reverse recovery time test circuit and waveforms.
r
= 0.6 ns; reverse voltage pulse duration t
150
OSCILLOSCOPE
T ( C)
j
SAMPLING
R = 50
MLB754
MGA881
o
i
200
Ω
V R
5
handbook, halfpage
10%
t r
f = 1 MHz; T
Fig.6
90%
p
(pF)
C d
= 5 μs; duty factor δ = 0.05.
input signal
2
1
0
0
t p
Diode capacitance as a function of reverse
voltage; per diode; typical values.
j
= 25 °C.
5
t
10
I F
output signal
15
Product data sheet
BAV199W
V R (V)
t rr
MBG526
20
(1)
t