PMEG2010EPA NXP Semiconductors, PMEG2010EPA Datasheet - Page 8
PMEG2010EPA
Manufacturer Part Number
PMEG2010EPA
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection
Manufacturer
NXP Semiconductors
Datasheet
1.PMEG2010EPA.pdf
(13 pages)
NXP Semiconductors
PMEG2010EPA_1
Product data sheet
Fig 11. Average forward current as a function of
I
F(AV)
(A)
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
1.5
1.0
0.5
0.0
0
Ceramic PCB, Al
T
ambient temperature; typical values
j
= 150 °C
25
(1)
(2)
(3)
(4)
50
2
O
75
3
, standard footprint
100
125
T
amb
006aab635
150
(°C)
Rev. 01 — 15 December 2009
175
Fig 12. Average forward current as a function of
I
F(AV)
(A)
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
1.5
1.0
0.5
0.0
0
T
solder point temperature; typical values
1 A low V
j
= 150 °C
25
(1)
(2)
(3)
(4)
50
F
MEGA Schottky barrier rectifier
PMEG2010EPA
75
100
125
© NXP B.V. 2009. All rights reserved.
T
sp
006aab636
150
(°C)
175
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