MRF377H Freescale Semiconductor, Inc, MRF377H Datasheet

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MRF377H

Manufacturer Part Number
MRF377H
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field - Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
• Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,
• Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Device Designed for Push - Pull Operation Only
• Integrated ESD Protection
• Excellent Thermal Stability
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with frequen-
I
I
Output Power
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
DQ
DQ
Derate above 25°C
Derate above 25°C
Case Temperature 81°C, 105 W CW
Case Temperature 77°C, 45 W CW
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
Output Power — 45 Watts Avg.
Power Gain ≥ 16.7 dB
Drain Efficiency ≥ 21%
ACPR ≤ - 58 dBc
Output Power — 80 Watts Avg.
Power Gain ≥ 16.5 dB
Drain Efficiency ≥ 27.5%
IMD ≤ - 31.3 dBc
= 2000 mA, 8K Mode, 64 QAM
= 2000 mA
C
= 25°C
C
= 25°C
Characteristic
Rating
μ
″ Nominal.
Symbol
Symbol
V
R
V
T
CW
P
T
DSS
T
I
θJC
GS
stg
D
D
C
J
470 - 860 MHz, 45 W AVG., 32 V
Document Number: MRF377H
CASE 375G - 04, STYLE 1
MRF377HR3
MRF377HR5
LATERAL N - CHANNEL
RF POWER MOSFETs
- 65 to +150
Value
- 0.5, +65
- 0.5, +15
Value
MRF377HR3 MRF377HR5
1.38
0.27
0.29
648
150
200
235
3.7
NI - 860C3
17
(1,2)
Rev. 1, 5/2006
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
W
1

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MRF377H Summary of contents

Page 1

... RF Device Data Freescale Semiconductor ″ Nominal. μ Symbol V DSS Symbol R θJC Document Number: MRF377H Rev. 1, 5/2006 MRF377HR3 MRF377HR5 470 - 860 MHz AVG LATERAL N - CHANNEL RF POWER MOSFETs CASE 375G - 04, STYLE 860C3 Value Unit - 0.5, +65 Vdc - 0.5, +15 Vdc GS 17 ...

Page 2

... DD out DQ 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurement made with device in push - pull configuration. 4. Drains are tied together internally as this is a total device value. MRF377HR3 MRF377HR5 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I ...

Page 3

... MRF377HR3 MRF377HR5 Unit % dBc dB % dBc 3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 1. 845 - 875 MHz Narrowband Test Circuit Component Layout MRF377HR3 MRF377HR5 4 Description 2508051107Y0 ...

Page 5

... Vdc 859.95 MHz 860.05 MHz 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power Vdc 2000 859.95 MHz 860.05 MHz η D 100 P , OUTPUT POWER (WATTS) PEP out Output Power −20 −40 −60 −80 MRF377HR3 MRF377HR5 5 ...

Page 6

... Figure 7. 845 - 875 MHz Narrowband Series Equivalent Source and Load Impedance MRF377HR3 MRF377HR5 845 MHz Z load Z source f = 875 MHz f = 845 MHz 2000 mA Avg., DVBT OFDM DD DQ out source MHz Ω 845 4.66 - j5.90 8.59 - j4.22 860 4.38 - j5.64 9.36 - j4.95 875 3.93 - j5.33 9.39 - j6. Test circuit impedance as measured from source gate to gate, balanced configuration ...

Page 7

... Manufacturer Fair - Rite DS Electronics AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera Gigatronics AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX / Kyocera AVX Kemet Kemet Kemet Tecate United Chemi - Con AVX CoilCraft CoilCraft CoilCraft CoilCraft DS Electronics MRF377HR3 MRF377HR5 7 ...

Page 8

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Topside View Figure 8. 470 - 860 MHz Broadband Test Circuit Component Layout MRF377HR3 MRF377HR5 8 C19 C32 L3 ...

Page 9

... Vdc 560 MHz = 2000 mA 860 MHz 760 MHz OUTPUT POWER (WATTS) AVG. out Figure 11. Single - Channel DVBT OFDM Output Power 7.61 MHz 4 kHz BW 4 kHz BW −4 −3 −2 − FREQUENCY (MHz) MRF377HR3 MRF377HR5 470 MHz 660 MHz 100 ...

Page 10

... MHz −40 760 MHz 560 MHz −45 − OUTPUT POWER (WATTS) AVG. out Figure 17. Single - Channel ATSC 8VSB Broadband Performance Adjacent Channel Power Ratio versus Output Power MRF377HR3 MRF377HR5 Vdc (Avg.) out I = 2000 mA DQ ATSC 8VSB ...

Page 11

... Test circuit impedance as measured from source gate to gate, balanced configuration Test circuit impedance as measured load from drain to drain, balanced configuration. Device Input + Under Matching Test Network − source f = 470 MHz Z load f = 860 MHz = 10 Ω load Ω Output − Matching Network + load MRF377HR3 MRF377HR5 11 ...

Page 12

... MRF377HR3 MRF377HR5 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MRF377HR3 MRF377HR5 13 ...

Page 14

... MRF377HR3 MRF377HR5 14 NOTES RF Device Data Freescale Semiconductor ...

Page 15

... J 0.2125 BSC 5.397 BSC K 0.135 0.165 3.43 L 0.425 BSC 10.8 BSC M 0.852 0.868 21.64 N 0.851 0.869 21.62 Q 0.118 0.138 3.00 R 0.395 0.405 10.03 S 0.394 0.406 10.01 bbb 0.010 REF 0.25 REF T SEATING ccc 0.015 REF 0.38 REF PLANE STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF377HR3 MRF377HR5 MAX 34.16 9.91 5.69 8.51 1.78 0.15 2.72 4.19 22.05 22.07 3.30 10.29 10.31 15 ...

Page 16

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF377HR3 MRF377HR5 Document Number: MRF377H Rev. 1, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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