STM32F407IGH6 STMicroelectronics, STM32F407IGH6 Datasheet - Page 70

Microcontrollers (MCU) ARM M4 1024 FLASH 168 Mhz 192kB SRAM

STM32F407IGH6

Manufacturer Part Number
STM32F407IGH6
Description
Microcontrollers (MCU) ARM M4 1024 FLASH 168 Mhz 192kB SRAM
Manufacturer
STMicroelectronics
Datasheet

Specifications of STM32F407IGH6

Core
ARM Cortex M4
Processor Series
STM32F4
Data Bus Width
32 bit
Maximum Clock Frequency
168 MHz
Program Memory Size
1024 KB
Data Ram Size
192 KB
On-chip Adc
Yes
Number Of Programmable I/os
140
Number Of Timers
10
Operating Supply Voltage
1.7 V to 3.6 V
Package / Case
UFBGA-176
Mounting Style
SMD/SMT
A/d Bit Size
12 bit
A/d Channels Available
24
Interface Type
CAN, I2C, I2S, SPI, UART
Program Memory Type
Flash
Lead Free Status / Rohs Status
 Details

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Electrical characteristics
5.3.6
70/167
Table 16.
1. The product behavior is guaranteed by design down to the minimum V
2. The average expected gain in power consumption when VOS = 0 compared to VOS = 1 is around 10% for
3. Guaranteed by design, not tested in production.
4. The reset temporization is measured from the power-on (POR reset or wakeup from V
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in
measurement
All Run mode current consumption measurements given in this section are performed using
a CoreMark-compliant code.
T
RSTTEMPO
V
the whole temperature range, when the system clock frequency is between 30 and 144 MHz.
when first instruction is read by the user application code.
E
Symbol
BORhyst
I
V
V
V
RUSH
RUSH
V
BOR1
BOR2
BOR3
12
(3)
(3)
(3)
(3)(4)
Embedded reset and power control block characteristics (continued)
scheme.
Brownout level 1
threshold
Brownout level 2
threshold
Brownout level 3
threshold
1.2 V domain
voltage
BOR hysteresis
Reset temporization
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
Parameter
(2)(3)
Doc ID 022152 Rev 2
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
VOS bit in PWR_CR
register = 0
VOS bit in PWR_CR
register = 1
V
I
RUSH
DD
= 1.8 V, T
= 171 mA for 31 µs
Conditions
A
= 105 °C,
Figure 19: Current consumption
POR/PDR
STM32F405xx, STM32F407xx
2.13
2.23
2.44
2.53
2.75
2.85
1.08
1.20
Min
0.5
value.
-
-
-
BAT
2.19
2.29
2.50
2.59
2.83
2.92
1.14
1.26
Typ
100
160
1.5
-
) to the instant
Max
2.24
2.33
2.56
2.63
2.88
2.97
1.20
1.32
200
3.0
5.4
-
Unit
mV
mA
ms
µC
V
V
V
V
V
V
V
V

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