K4H561638H-ZPB3 Samsung Semiconductor, K4H561638H-ZPB3 Datasheet - Page 22
K4H561638H-ZPB3
Manufacturer Part Number
K4H561638H-ZPB3
Description
Manufacturer
Samsung Semiconductor
Datasheet
1.K4H561638H-ZPB3.pdf
(24 pages)
Specifications of K4H561638H-ZPB3
Lead Free Status / Rohs Status
Compliant
K4H561638H
Voltage
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
(V)
Typical
12.2
18.1
24.1
29.8
34.6
39.4
43.7
47.5
51.3
54.1
56.2
57.9
59.3
60.1
60.5
61.0
61.5
62.0
62.5
62.9
63.3
63.8
64.1
64.6
64.8
65.0
Low
6.0
Pulldown Current (mA)
Typical
100.9
101.9
102.8
103.8
104.6
105.4
High
13.5
20.1
26.6
33.0
39.1
44.2
49.8
55.2
60.3
65.2
69.9
74.2
78.4
82.3
85.9
89.1
92.2
95.3
97.2
99.1
6.8
Table 8. Full Strength Driver Characteristics
Minimum
13.8
18.4
23.0
27.7
32.2
36.8
39.6
42.6
44.8
46.2
47.1
47.4
47.7
48.0
48.4
48.9
49.1
49.4
49.6
49.8
49.9
50.0
50.2
50.4
50.5
4.6
9.2
Maximum
103.8
108.4
112.1
115.9
119.6
123.3
126.5
129.5
132.4
135.0
137.3
139.2
140.8
18.2
26.0
33.9
41.8
49.4
56.8
63.2
69.9
76.3
82.5
88.3
93.8
99.1
9.6
Typical
-12.2
-18.1
-24.0
-29.8
-34.3
-38.1
-41.1
-41.8
-46.0
-47.8
-49.2
-50.0
-50.5
-50.7
-51.0
-51.1
-51.3
-51.5
-51.6
-51.8
-52.0
-52.2
-52.3
-52.5
-52.7
-52.8
Low
-6.1
Industrial
Typical
pullup Current (mA)
-101.3
-107.1
-112.4
-118.7
-124.0
-129.3
-134.6
-139.9
-145.2
-150.5
-155.3
-160.1
-14.5
-21.2
-27.7
-34.1
-40.5
-46.9
-53.1
-59.4
-65.5
-71.6
-77.6
-83.6
-89.7
-95.5
High
-7.6
Rev. 1.3 February 2007
Minimum
DDR SDRAM
-13.8
-18.4
-23.0
-27.7
-32.2
-36.0
-38.2
-38.7
-39.0
-39.2
-39.4
-39.6
-39.9
-40.3
-40.4
-40.1
-40.2
-40.5
-40.6
-40.7
-40.8
-40.9
-41.0
-41.1
-41.2
-4.6
-9.2
Maximum
-100.6
-108.1
-123.0
-130.4
-136.7
-144.2
-150.5
-156.9
-163.2
-169.6
-176.0
-181.3
-187.6
-192.9
-198.2
-115.5
-10.0
-20.0
-29.8
-38.8
-46.8
-54.4
-61.8
-69.5
-77.3
-85.2
-93.0