MT41J64M16LA-187E:B Micron Technology Inc, MT41J64M16LA-187E:B Datasheet - Page 126
MT41J64M16LA-187E:B
Manufacturer Part Number
MT41J64M16LA-187E:B
Description
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Datasheet
1.MT41J64M16LA-187EB.pdf
(208 pages)
Specifications of MT41J64M16LA-187E:B
Organization
64Mx16
Density
1Gb
Address Bus
16b
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
265mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 48: Write Leveling Sequence
PDF: 09005aef826aa906
1Gb_DDR3_SDRAM.pdf – Rev. J 05/10 EN
Early remaining DQ
Late remaining DQ
Differential DQS 4
Prime DQ 5
Command
ODT
CK#
CK
MRS 1
Notes:
t MOD
NOP 2
t WLDQSEN
1. MRS: Load MR1 to enter write leveling mode.
2. NOP: NOP or DES.
3. DQS, DQS# needs to fulfill minimum pulse width requirements
4. Differential DQS is the differential data strobe (DQS, DQS#). Timing reference points are
5. DRAM drives leveling feedback on a prime DQ (DQ0 for x4 and x8). The remaining DQ
(MIN) as defined for regular writes. The maximum pulse width is system-dependent.
the zero crossings. The solid line represents DQS; the dotted line represents DQS#.
are driven LOW and remain in this state throughout the leveling procedure.
NOP
t WLMRD
NOP
t DQSL 3
NOP
t WLH
126
T1
NOP
Indicates a Break in
Time Scale
t WLO
t WLO
t WLO
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t DQSL 3
1Gb: x4, x8, x16 DDR3 SDRAM
NOP
t WLS
Undefined Driving Mode
NOP
T2
t DQSH 3
© 2006 Micron Technology, Inc. All rights reserved.
NOP
t WLO
t
DQSH (MIN) and
Write Leveling
NOP
Don’t Care
NOP
t
DQSL
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