IRF740 STMicroelectronics, IRF740 Datasheet
IRF740
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IRF740 Summary of contents
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... Applications ■ Switching application Order codes Part number IRF740 August 2006 N-channel 400V - 0.46Ω - 10A TO-220 PowerMESH™ II Power MOSFET R I DS(on) D <0.55Ω 10A Internal schematic diagram Marking IRF740@ Rev 4 IRF740 TO-220 Package Packaging TO-220 Tube 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ IRF740 ...
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... IRF740 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T tot Derating Factor (2) dv/dt Peak diode recovery voltage slope T Storage temperature ...
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... Parameter Test conditions V > D(on =25V, f=1 MHz 200V 4.7Ω (see Figure 12) V =320V =10V GS Min. Typ. Max 400 100 ± = 250µ 5.3A 0.46 0.55 Min. Typ. Max. DS(on)max, 7 1400 220 10V 10. IRF740 Unit V µA µ Ω Unit ...
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... IRF740 Table 6. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance IRF740 ...
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... IRF740 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...
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... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform IRF740 ...
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... IRF740 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... IRF740 inch MIN. TYP. MAX. 0.173 0.181 0.024 0.034 0.045 0.066 0.019 0.027 0.60 0.620 0.393 0.409 0.094 0.106 0.194 0.202 0.048 0.052 ...
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... IRF740 5 Revision history Table 7. Revision history Date 09-Sep-2004 03-Aug-2006 Revision Complete version,new datasheet according to 3 PCN DSG/CT/2C14. special marking: IRF740 @ 4 New template, no content change Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com IRF740 ...