BUK9515-100A,127 NXP Semiconductors, BUK9515-100A,127 Datasheet - Page 3

• Manufacturer Part Number: BUK9515-100A,127
• Description: MOSFET N-CH 100V 75A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9515-100A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 8600pF @ 25V
• Power - Max: 230W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details
• Other names: 934055410127; BUK9515-100A; BUK9515-100A

Philips Semiconductors
Logic level FET
AVALANCHE LIMITING VALUE
November 1999
TrenchMOS
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
Normalised Current Derating
D 25 ˚C
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
= 35 A; V
5 V
= 5 V; R
3
DD
GS
= 50 ; T
ID/A
25 V;
1000
100
10
1
I
D
0.001
1
0.01
& I
0.1
Fig.3. Safe operating area. T
1
Fig.4. Transient thermal impedance.
RDS(ON) = VDS/ID
DM
D =
mb
0.5
0.2
0.1
0.05
0.02
0
Z
= f(V
= 25 ˚C
th j-mb
0.00001
DS
= f(t); parameter D = t
); I
DM
MIN.
single pulse; parameter t
0.001
-
10
Zth / (K/W)
DC
VDS/V
t/S
P
TYP.
D
BUK9515-100A
BUK9615-100A
-
Product specification
0.1
t
p
mb
T
MAX.
= 25 ˚C
p
D =
/T
120
T
t
p
t
10
Rev 1.000
100
UNIT
mJ
tp =
1uS
100uS
1mS
10mS
100mS
p