FDP6670AL Fairchild Semiconductor, FDP6670AL Datasheet
FDP6670AL
Manufacturer Part Number
FDP6670AL
Description
MOSFET N-CH 30V 80A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDP6670AL.pdf
(5 pages)
Specifications of FDP6670AL
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.5 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 5V
Input Capacitance (ciss) @ Vds
2440pF @ 15V
Power - Max
68W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 m Ohms
Forward Transconductance Gfs (max / Min)
115 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
68 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP6670AL
Manufacturer:
FSC
Quantity:
347
Company:
Part Number:
FDP6670AL
Manufacturer:
Fairchild Semiconductor
Quantity:
135
Company:
Part Number:
FDP6670AL
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDP6670AL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP6670AL/FDB6670AL
N-Channel Logic Level PowerTrench
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
and fast switching speed.
G
2003 Fairchild Semiconductor Corporation
DS(ON)
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
D
, T
JC
JA
Device Marking
S
STG
specifications.
FDB6670AL
FDP6670AL
converters
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
using
TO-220
FDP Series
either
– Continuous
– Pulsed
FDB6670AL
FDP6670AL
Device
Parameter
synchronous
C
G
Derate above 25 C
= 25 C
T
S
A
DS(ON)
=25
or
o
C unless otherwise noted
Reel Size
Tube
13’’
(Note 1)
(Note 1)
MOSFET
TO-263AB
FDB Series
D
Features
80 A, 30 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
175 C maximum junction temperature rating
DS(ON)
Tape width
R
R
DS(ON)
DS(ON)
–65 to +175
24mm
Ratings
n/a
0.45
62.5
240
2.2
30
80
68
= 6.5 m
= 8.5 m
20
G
FDP6670AL/FDB6670AL Rev D(W)
@ V
@ V
S
D
GS
GS
May 2003
= 10 V
= 4.5 V
Quantity
800 units
45
Units
W/ C
C/W
C/W
W
V
V
A
C
Related parts for FDP6670AL
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDP6670AL Summary of contents
Page 1
... T =25 C unless otherwise noted A (Note 1) (Note Derate above 25 C Reel Size 13’’ Tube May 2003 DS(ON 8 4.5 V DS(ON Ratings Units 240 –65 to +175 C 2.2 C/W 62.5 C/W Tape width Quantity 24mm 800 units n/a 45 FDP6670AL/FDB6670AL Rev D(W) ...
Page 2
... 250 250 A, Referenced 250 250 A, Referenced 4 =125 10V 1.0 MHz mV 1.0 MHz 10V GEN (Note 100 A/µ Min Typ Max Units 114 mV 100 1 1 mV/ C –5 5.2 6.5 6.5 8.5 m 7.2 9 115 S 2440 pF 580 pF 250 pF 1 0.9 1 FDP6670AL/FDB6670AL Rev D(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 40A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDP6670AL/FDB6670AL Rev D(W) 100 10 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0.001 0. TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 2.2°C 25°C A 0.0001 0.001 0.01 0 TIME (sec) 1 Power Dissipation. R ( 2.2 °C Duty Cycle 0.1 FDP6670AL/FDB6670AL Rev D( ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...