MBR4045PT-E3/45 Vishay, MBR4045PT-E3/45 Datasheet - Page 3

RECTIFIER DUAL 40A 45V TO247AD

MBR4045PT-E3/45

Manufacturer Part Number
MBR4045PT-E3/45
Description
RECTIFIER DUAL 40A 45V TO247AD
Manufacturer
Vishay
Datasheet

Specifications of MBR4045PT-E3/45

Diode Configuration
1 Pair Common Cathode
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
800mV @ 40A
Current - Reverse Leakage @ Vr
1mA @ 45V
Current - Average Rectified (io) (per Diode)
40A
Voltage - Dc Reverse (vr) (max)
45V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole, Radial
Package / Case
TO-3P-3, TO-247-3
Product
Schottky Diodes
Peak Reverse Voltage
45 V
Forward Continuous Current
40 A
Max Surge Current
400 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.8 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
45V
Forward Current If(av)
40A
Forward Voltage Vf Max
800mV
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR4045PT
MBR4045PT-E3/45GI
MBR4045PT/45
MBR4045PT/45GI
MBR4045PT/45GI
MBR4045PTGI
MBR4045PTGI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR4045PT-E3/45
Manufacturer:
Vishay
Quantity:
850
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88679
Revision: 25-Mar-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0.001
0.01
0.01
100
100
10
0.1
0.1
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0
0
T
J
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
0.2
Instantaneous Forward Voltage (V)
20
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
0.4
40
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
For technical questions within your region, please contact one of the following:
0.6
T
T
T
J
J
J
= 25 °C
60
= 75 °C
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.795 (20.2)
0.820 (20.8)
0.775 (19.6)
0.840 (21.3)
0.8
0.225 (5.7)
0.245 (6.2)
T
0.140 (3.5)
0.160 (4.1)
J
0.225 (5.7)
0.205 (5.2)
80
= 125 °C
1.0
1
0.645 (16.4)
0.625 (15.9)
100
1.2
2
TO-247AD (TO-3P)
3
PIN 1
PIN 3
0.323 (8.2)
0.313 (7.9)
0.048 (1.22)
0.044 (1.12)
0.142 (3.6)
0.138 (3.5)
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.117 (2.97)
0.170
(4.3)
PIN 2
CASE
10° TYP.
Both Sides
0.203 (5.16)
0.193 (4.90)
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
MBR4035PT thru MBR4060PT
10 000
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
30°
0.1
10
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Vishay General Semiconductor
0.078 (1.98) REF.
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
10
0.1
1° REF.
Both Sides
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
www.vishay.com
100
100
3

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