Americas:
This notice is to inform you of a change that will be made to certain ADI products (see Material Report). Any special requests regarding the change
should be made within 30 days of this notice.
Revision Description*:
Note: Revised fields are indicated by a red field name. See Appendix B for revision history.
PCN Title:
Publication Date:
Samples Available Date:
Effectivity Date:
Description Of Change
Reason For Change
Anticipated impact of the change (positive or negative) on fit, form, function & reliability
Summary of Supporting Information
Correct Effectivity Date to 27-Feb-2009
1. Power On Reset
The edit to the power on reset will ensure that for certain supply profiles (a combination of ramp up/down times, the size of the voltage dip and the duration of
the dip) the power on reset block is activated to ensure the AD7417 behaves predictably. The Edit involves an all layer change where the existing power on
reset block was replaced with two independent POR blocks (which are OR'd
together for extra reliability) which represent the state of the art within ADI on this process node. The edit is localized to a small area of the die. The additional
current consumed by the POR circuitry means that the maximum powerdown IDD specification will increase from 1uA to 1.5uA. Typical powerdown current
will be 700nA.
2. Serial Interface
The edit to the serial bus controller makes a minor change to a state machine and will allow correct operation of the serial bus during fault conditions. This
required an all layer change to introduce 2 digital gates into the serial bus design. As with the POR edit the design was copied from a proven design on the
process.
REV B DECEMBER 2008 UPDATE: Results from characterisation and yield analysis have shown that the datasheet specification for powerdown IDD must
increase from 1 to 1.5uA. The datasheet is being revised accordingly. All samples sent to customers under the existing PCN (Rev. A) have used the final silicon
and are representative of this datasheet change so no additional sampling is required.
Improved product performance as a result of wafer fab transfer.
The only datasheet specification change concerns Powerdown IDD. Typical value increases to 700nA. Maximum value increases to 1.5uA (from 1uA). All
other datasheet specifications are unaffected.
1.Power On Reset: Evaluation to date has included testing 3 parts from one lot over voltage and temperature extremes with a matrix of rise and fall time to
confirm the fix vs. the old silicon. Testing over supply and temperature on 100 units from the same single lot has confirmed that the edit has left all other
specifications (other than powerdown IDD) unchanged.
2. Serial Interface: Silicon characterization was carried out on 3 parts from 1 lot at voltage and
temperature extremes to confirm the specific fix. Yield analysis on 100 parts from the same lot confirmed that the fix did not impact other specifications.
ESD and LU testing confirmed that (as expected) the part is unaffected by this redesign.
Supporting Documents
PCN_Americas@analog.com
For questions on this PCN, send email to the regional contacts below or contact your local ADI sales representitive
Product/Process Change Notice - PCN 08_0040 Rev. C
Analog Devices, Inc. Three Technology Way Norwood, Massachusetts 02062-9106
AD7417 Functionality Improvement
18-Dec-2008
28-Nov-2008
27-Feb-2009 (the earliest date that a customer could expect to receive changed material)
None
Europe:
PCN_Europe@analog.com
Analog Devices, Inc. PCN 08_0040_Rev_C Page 1 of 3
Japan:
Rest of Asia:
PCN_Japan@analog.com
PCN_ROA@analog.com