WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com
Product Features
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Applications
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Specifications
1. IS-95A signal modulation, 9 channels forward, 1.23 MHz BW, ±885 kHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”ON”
Absolute Maximum Rating
Operation of this device above any of these parameters may cause permanent damage.
25 ºC, V
Parameter
Operational Bandwidth
Test Frequency
Power Gain
IS-95A ACPR @ 27dBm
wCDMA ACLR @ 26.5dBm
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current @ 27 dBm
Quiescent Current, Icq
Device Voltage, Vcc
Device Voltage, Vpd
Load Stability
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
1930 – 1990 MHz
32.5 dB Gain
+36 dBm P1dB
-62 dBc ACPR
-55 dBc ACLR
+12 V Single Supply
Power Down Mode
Bias Current Adjustable
RoHS-compliant flange-mount pkg
Final stage amplifiers for repeaters
Optimized for driver amplifier
PA mobile infrastructure
with output terminated in 50 Ω
@ 27 dBm IS-95A linear power
@ 26.5 dBm wCDMA linear power
cc
=12V, V
AP501
PCS-band 4W HBT Amplifier Module
pd
=5V, I
(3)
cq
=820mA, R7=0Ω, 50Ω unmatched fixture
(1)
(2)
Units Min
VSWR
MHz
MHz
dBm
dBm
dBc
dBc
mA
mA
dB
dB
dB
V
V
Rating
-40 to +85 °C
-55 to +150 °C
+15 dBm
The AP501 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package.
amplifier module has 32.5 dB gain, while being able to
achieve high performance for PCS-band applications with
+36 dBm of compressed 1dB power. The module has been
internally optimized for driver applications provide -62 dBc
ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR
at 26.5 for wCDMA applications. The module can be biased
down for current when higher efficiency is required.
The AP501 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
The AP501 is targeted for use as a driver or final stage amplifier
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
10:1
790
780
30
1930 – 1990
Typ Max
-61.8
1960
Product Description
32.4
+36
+52
+12
840
820
-55
22
+5
6
30.5
940
920
-55
Typical Performance
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Ordering Information
Parameter
Operating Current @ 27 dBm
Quiescent Current, Icq
Device Voltage, Vcc
R7 value
Test Frequency
Power Gain
IS-95A ACPR @ 27dBm
wCDMA ACLR @ 26.5dBm
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Part No.
AP501
AP501-PCB
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0Ω, 50Ω unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 ºC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730Ω, 50Ω tuned fixture.
The multi-stage
Specifications and information are subject to change without notice
Description
PCS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
(1)
(2)
Functional Diagram
Units Config1 Config2
MHz
dBm
dBm
dBc
dBc
mA
mA
dB
dB
dB
V
Ω
Product Information
(4)
Pin No.
Case
2 / 4
3 / 5
1
1
6
2
Top View
3
-61.8
1960
32.4
840
820
+12
+36
+52
-55
22
0
6
RF Output
Function
RF Input
Ground
Page 1 of 5 July 2008
4
Vpd
Vcc
5
6
1960
30.5
420
250
+12
730
+36
+52
-53
-49
20
8