IPD60R450E6 Infineon Technologies

IPD60R450E6

Manufacturer Part Number

IPD60R450E6

Description

MOSFET N-CH 600V 9.2A TO252

Manufacturer

Infineon Technologies

Series

CoolMOS™r

Specifications of IPD60R450E6

Package / Case

Mounting Type

Power - Max

74W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

28nC @ 10V

Vgs(th) (max) @ Id

3.5V @ 280µA

Current - Continuous Drain (id) @ 25° C

9.2A

Drain To Source Voltage (vdss)

600V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

450 mOhm @ 3.4A, 10V

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.41 Ohms

Drain-source Breakdown Voltage

650 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

9.2 A

Power Dissipation

74 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IPD60R450E6

Manufacturer:

INFINEON

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IPD60R450E6

Manufacturer:

INFINEON

Quantity:

12 500

Company:

Meier Automation Equipment Co., Limited

Part Number:

IPD60R450E6

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Related parts for IPD60R450E6

Related keywords

IPD60R450E6 component
IPD60R450E6 part
IPD60R450E6 distributor
IPD60R450E6 RoHS